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| STB75NH02L N-Channel 24V - 0.0062 - 60A - D2PAK STripFETTM III Power MOSFET General features Type STB75NH02L VDSS 24V RDS(on) <0.008 ID 60A (1) 3 1 1. Limited by package RDS(ON) * Qg industry's benchmark Conduction losses reduced Switching losses reduced Low threshold device D2PAK Description The device utilizes the latest advanced design rules of ST's proprietary STripFETTM technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. Internal schematic diagram Applications Switching application Order codes Part number STB75NH02LT4 Marking B75NH02L Package DPAK Packaging Tape & Reel July 2006 Rev 3 1/13 www.st.com 13 Contents STB75NH02L Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 4 5 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STB75NH02L Electrical ratings 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Drain-source voltage rating Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor EAS (5) TJ Tstg Single pulse avalanche energy Operating junction temperature storage temperature Value 30 24 20 60 53 240 80 0.53 360 -55 to 175 Unit V V V A A A W W/C mJ C Symbol Vspike (1) VDS VGS ID (2) ID IDM (3) PTOT (4) 1. Garanted when external Rg = 4.7 and tf < tfmax 2. Value limited by wire bonding 3. Pulse width limited by safe operating area 4. This value is rated according to RthJC 5. Starting TJ =25C, Id = 30A, Vdd = 15V Table 2. Symbol RthJC RthJA Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-amb max Maximum lead temperature for soldering purpose Value 1.88 62.5 300 Unit C/W C/W C 3/13 Electrical characteristics STB75NH02L 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 25 mA, VGS= 0 VDS = 20 V, VDS = 20 V,Tc = 125C VGS = 20V VDS= VGS, ID = 250 A VGS= 10 V, ID= 30 A VGS= 5 V, ID= 30 A 1 1.8 0.0062 0.008 0.008 0.014 Min. 24 1 10 100 Typ. Max. Unit V A A nA V Table 4. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd RG Dynamic Parameter Forward Transconductance Test conditions VDS =10V, ID = 18A Min. Typ. 27 2050 545 70 17 7.7 3.5 1.1 22 Max. Unit S pF pF pF nC nC nC Input Capacitance VDS =15V, f=1 MHz, VGS=0 Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Input Resistance VDD=10V, ID = 60 A VGS =5V Figure 14 f=1MHz Gate DC Bias =0 Test Signal Level =20mV Open Drain 1. Pulsed: pulse duration = 300s, duty cycle 1.5% Table 5. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time rise time Test conditions VDD=10 V, ID=30 A, RG=4.7, VGS=10V Figure 15 VDD=10 V, ID=30A, RG=4.7, VGS=10V Figure 15 Min. Typ. 12 200 Max. Unit ns ns Turn-off delay time fall time 18 25 ns ns 4/13 STB75NH02L Table 6. Symbol ISD ISDM VSD(1) trr Qrr IRRM Electrical characteristics Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on Voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 30 A, VGS = 0 ISD=60 A, di/dt = 100A/s, VDD=15 V, TJ=150C 36 35 3.6 Test conditions Min. Typ. Max. 60 240 1.3 Unit A A V ns C A 1. Pulsed: pulse duration = 300s, duty cycle 1.5% 5/13 Electrical characteristics STB75NH02L 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 5. Transfer characteristics Figure 4. Transconductance Figure 6. Static drain-source on resistance 6/13 STB75NH02L Figure 7. Electrical characteristics Gate charge vs gate -source voltage Figure 10. Capacitance variations Figure 8. Normalized gate threshold voltage vs temperatute Figure 11. Normalized on resistance vs Temperature Figure 9. Source-drain diode forward characteristics Figure 12. Normalized BVDSS vs temperature 7/13 Test circuits STB75NH02L 3 Test circuits Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for indictive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/13 STB75NH02L Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 Package mechanical data STB75NH02L D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 10/13 STB75NH02L Packing mechanical data 5 Packing mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 11/13 Revision history STB75NH02L 6 Revision history Table 7. Date 24-Oct-2005 15-Mar-2006 22-Jul-2006 Revision history Revision 1 2 3 Preliminary version Complete version New template, no content change Changes 12/13 STB75NH02L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13 |
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